N-channel transistor IRF7103, 3A, SO, SO-8, 50V
Quantity
Unit price
1-4
0.72$
5-24
0.60$
25-49
0.52$
50-94
0.48$
95+
0.40$
| Quantity in stock: 82 |
N-channel transistor IRF7103, 3A, SO, SO-8, 50V. ID (T=25°C): 3A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 50V. Assembly/installation: surface-mounted component (SMD). Channel type: N. Drain-source protection: yes. Function: 2xN-CH 50V. G-S Protection: no. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. Quantity per case: 2. RoHS: yes. Technology: HEXFET Power MOSFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14
IRF7103
15 parameters
ID (T=25°C)
3A
Housing
SO
Housing (according to data sheet)
SO-8
Voltage Vds(max)
50V
Assembly/installation
surface-mounted component (SMD)
Channel type
N
Drain-source protection
yes
Function
2xN-CH 50V
G-S Protection
no
Number of terminals
8
Pd (Power Dissipation, Max)
2W
Quantity per case
2
RoHS
yes
Technology
HEXFET Power MOSFET
Original product from manufacturer
International Rectifier