N-channel transistor IRF7101PBF, SO8, 20V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 20V. Ciss Gate Capacitance [pF]: 320pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 3.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.8A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: F7101. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 24 ns. Switch-on time ton [nsec.]: 7 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14