N-channel transistor IRF644, 8.5A, 14A, 250uA, 0.28 Ohms, TO-220, TO-220AB, 250V

N-channel transistor IRF644, 8.5A, 14A, 250uA, 0.28 Ohms, TO-220, TO-220AB, 250V

Quantity
Unit price
1-4
1.88$
5-24
1.57$
25-49
1.37$
50-99
1.25$
100+
1.07$
Quantity in stock: 147

N-channel transistor IRF644, 8.5A, 14A, 250uA, 0.28 Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 8.5A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Cost): 330pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 56A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. RoHS: yes. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRF644
30 parameters
ID (T=100°C)
8.5A
ID (T=25°C)
14A
Idss (max)
250uA
On-resistance Rds On
0.28 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
250V
Assembly/installation
PCB through-hole mounting
C(in)
1300pF
Channel type
N
Cost)
330pF
Drain-source protection
zener diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
56A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
125W
Quantity per case
1
RoHS
yes
Td(off)
53 ns
Td(on)
11 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
250 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier