N-channel transistor IRF640PBF, 200V, 200V, 0.18 Ohms, TO220
Quantity
Unit price
3-5
1.82$
6-49
1.76$
50-149
1.50$
150-549
1.41$
550+
1.32$
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| Quantity in stock: 10 |
N-channel transistor IRF640PBF, 200V, 200V, 0.18 Ohms, TO220. Vdss (Drain to Source Voltage): 200V. Drain-source voltage (Vds): 200V. On-resistance Rds On: 0.18 Ohms. Housing: TO220. Channel type: N. Drive Voltage: 10V. Features: -. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 18A. Information: -. MSL: -. Max drain current: 18A. Mounting Type: THT. Pd (Power Dissipation, Max): 40W. Polarity: MOSFET N. Power: 125W. Series: -. Type of transistor: MOSFET power transistor. Original product from manufacturer: VISHAY IR. Minimum quantity: 3. Quantity in stock updated on 11/06/2025, 22:14
IRF640PBF
16 parameters
Vdss (Drain to Source Voltage)
200V
Drain-source voltage (Vds)
200V
On-resistance Rds On
0.18 Ohms
Housing
TO220
Channel type
N
Drive Voltage
10V
Gate/source voltage Vgs max
-20V
Id @ Tc=25°C (Continuous Drain Current)
18A
Max drain current
18A
Mounting Type
THT
Pd (Power Dissipation, Max)
40W
Polarity
MOSFET N
Power
125W
Type of transistor
MOSFET power transistor
Original product from manufacturer
VISHAY IR
Minimum quantity
3