N-channel transistor IRF640NSTRLPBF, D²-PAK, TO-263, 200V. Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 200V. Ciss Gate Capacitance [pF]: 1160pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 18A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms @ 11A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: F640NS. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 150W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 23 ns. Switch-on time ton [nsec.]: 10 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/06/2025, 22:14