N-channel transistor IRF640NPBF, TO220, 200V, 200V, 0.15 Ohms, 200V. Housing: TO220. Vdss (Drain to Source Voltage): 200V. Drain-source voltage (Vds): 200V. Housing (JEDEC standard): -. On-resistance Rds On: 0.15 Ohms. Drain-source voltage Uds [V]: 200V. Channel type: N. Ciss Gate Capacitance [pF]: 1160pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 18A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms @ 11A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 18A. Information: -. MSL: -. Manufacturer's marking: IRF640NPBF. Max drain current: 18A. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 150W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Polarity: MOSFET N. Power: 150W. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 23 ns. Switch-on time ton [nsec.]: 10 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14