N-channel transistor IRF634, 5.1A, 8.1A, 250uA, 0.45 Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 250uA. On-resistance Rds On: 0.45 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. Assembly/installation: PCB through-hole mounting. C(in): 770pF. Channel type: N. Cost): 190pF. Drain-source protection: zener diode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 32A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 74W. Quantity per case: 1. RoHS: yes. Td(off): 4.2 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14