N-channel transistor IRF630PBF, TO220, 200V, 200V. Housing: TO220. Vdss (Drain to Source Voltage): 200V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 200V. Ciss Gate Capacitance [pF]: 800pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 5.4A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 9A. Information: -. MSL: -. Manufacturer's marking: IRF630PBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 74W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Polarity: MOSFET N. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 39 ns. Switch-on time ton [nsec.]: 9.4 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/06/2025, 22:14