N-channel transistor IRF610PBF, TO-220AB, 200V, 1.5 Ohms, 200V

N-channel transistor IRF610PBF, TO-220AB, 200V, 1.5 Ohms, 200V

Quantity
Unit price
1-99
1.40$
100+
0.93$
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Quantity in stock: 300

N-channel transistor IRF610PBF, TO-220AB, 200V, 1.5 Ohms, 200V. Housing: TO-220AB. Drain-source voltage (Vds): 200V. Housing (JEDEC standard): -. On-resistance Rds On: 1.5 Ohms. Drain-source voltage Uds [V]: 200V. Channel type: N. Ciss Gate Capacitance [pF]: 140pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 3.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRF610PBF. Max drain current: 3.3A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 36W. Number of terminals: 3. Power: 36W. RoHS: yes. Switch-off delay tf[nsec.]: 11 ns. Switch-on time ton [nsec.]: 8.2 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRF610PBF
22 parameters
Housing
TO-220AB
Drain-source voltage (Vds)
200V
On-resistance Rds On
1.5 Ohms
Drain-source voltage Uds [V]
200V
Channel type
N
Ciss Gate Capacitance [pF]
140pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
3.3A
Drain current through resistor Rds [Ohm] @ Ids [A]
1.5 Ohms @ 2A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRF610PBF
Max drain current
3.3A
Max temperature
+150°C.
Maximum dissipation Ptot [W]
36W
Number of terminals
3
Power
36W
RoHS
yes
Switch-off delay tf[nsec.]
11 ns
Switch-on time ton [nsec.]
8.2 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
Vishay (ir)