N-channel transistor IRF540Z, 25A, 36A, 250uA, 21 milliOhms, TO-220, TO-220AB, 100V

N-channel transistor IRF540Z, 25A, 36A, 250uA, 21 milliOhms, TO-220, TO-220AB, 100V

Quantity
Unit price
1-4
1.33$
5-24
1.12$
25-49
0.98$
50-99
0.88$
100+
0.75$
Quantity in stock: 288

N-channel transistor IRF540Z, 25A, 36A, 250uA, 21 milliOhms, TO-220, TO-220AB, 100V. ID (T=100°C): 25A. ID (T=25°C): 36A. Idss (max): 250uA. On-resistance Rds On: 21 milliOhms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 1770pF. Channel type: N. Cost): 180pF. Drain-source protection: yes. Function: Ultra Low On-Resistance, <0.021 Ohms. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 140A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 92W. Quantity per case: 1. RoHS: yes. Td(off): 43 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRF540Z
30 parameters
ID (T=100°C)
25A
ID (T=25°C)
36A
Idss (max)
250uA
On-resistance Rds On
21 milliOhms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
1770pF
Channel type
N
Cost)
180pF
Drain-source protection
yes
Function
Ultra Low On-Resistance, <0.021 Ohms
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
140A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
92W
Quantity per case
1
RoHS
yes
Td(off)
43 ns
Td(on)
15 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
33 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier