N-channel transistor IRF540PBF, TO220, 100V, 100V. Housing: TO220. Vdss (Drain to Source Voltage): 100V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 1700pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 28A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohms @ 17A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 22A. Information: -. MSL: -. Manufacturer's marking: IRF540PBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 150W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 85W. Polarity: MOSFET N. RoHS: yes. Series: -. Switch-off delay tf[nsec.]: 53 ns. Switch-on time ton [nsec.]: 11 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/06/2025, 22:14