N-channel transistor IRF540NS, 25A, 33A, 250uA, 0.052 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=100°C): 25A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.052 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 1400pF. Channel type: N. Cost): 330pF. Drain-source protection: yes. Equivalents: IRF540NSPBF. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 110A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 140W. Quantity per case: 1. RoHS: yes. Td(off): 44 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27