N-channel transistor IRF540NPBF, 100V, 100V, 0.044 Ohms, TO220AB

N-channel transistor IRF540NPBF, 100V, 100V, 0.044 Ohms, TO220AB

Quantity
Unit price
5-9
0.87$
10-49
0.84$
50-249
0.74$
250-999
0.68$
1000+
0.64$
+1416 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 130
Minimum: 5

N-channel transistor IRF540NPBF, 100V, 100V, 0.044 Ohms, TO220AB. Vdss (Drain to Source Voltage): 100V. Drain-source voltage (Vds): 100V. On-resistance Rds On: 0.044 Ohms. Housing: TO220AB. Channel type: N. Drive Voltage: 10V. Features: -. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 33A. Information: -. MSL: -. Max drain current: 33A. Mounting Type: THT. Pd (Power Dissipation, Max): 130W. Polarity: MOSFET N. Power: 130W. Series: -. Type of transistor: MOSFET power transistor. Original product from manufacturer: Infineon. Minimum quantity: 5. Quantity in stock updated on 11/02/2025, 18:39

Technical documentation (PDF)
IRF540NPBF
16 parameters
Vdss (Drain to Source Voltage)
100V
Drain-source voltage (Vds)
100V
On-resistance Rds On
0.044 Ohms
Housing
TO220AB
Channel type
N
Drive Voltage
10V
Gate/source voltage Vgs max
-20V
Id @ Tc=25°C (Continuous Drain Current)
33A
Max drain current
33A
Mounting Type
THT
Pd (Power Dissipation, Max)
130W
Polarity
MOSFET N
Power
130W
Type of transistor
MOSFET power transistor
Original product from manufacturer
Infineon
Minimum quantity
5