N-channel transistor IRF530PBF, 100V, 100V, 0.16 Ohms, TO220AB
Quantity
Unit price
5-9
1.19$
10-49
1.16$
50-199
1.03$
200-799
0.95$
800+
0.87$
| +131 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Quantity in stock: 47 |
N-channel transistor IRF530PBF, 100V, 100V, 0.16 Ohms, TO220AB. Vdss (Drain to Source Voltage): 100V. Drain-source voltage (Vds): 100V. On-resistance Rds On: 0.16 Ohms. Housing: TO220AB. Channel type: N. Drive Voltage: 10V. Features: -. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 14A. Information: -. MSL: -. Max drain current: 14A. Mounting Type: THT. Pd (Power Dissipation, Max): 79W. Polarity: MOSFET N. Power: 75W. Series: -. Type of transistor: MOSFET power transistor. Original product from manufacturer: VISHAY IR. Minimum quantity: 5. Quantity in stock updated on 11/02/2025, 18:39
IRF530PBF
16 parameters
Vdss (Drain to Source Voltage)
100V
Drain-source voltage (Vds)
100V
On-resistance Rds On
0.16 Ohms
Housing
TO220AB
Channel type
N
Drive Voltage
10V
Gate/source voltage Vgs max
-20V
Id @ Tc=25°C (Continuous Drain Current)
14A
Max drain current
14A
Mounting Type
THT
Pd (Power Dissipation, Max)
79W
Polarity
MOSFET N
Power
75W
Type of transistor
MOSFET power transistor
Original product from manufacturer
VISHAY IR
Minimum quantity
5