N-channel transistor IRF530NPBF-IR, TO-220AB, 100V. Housing: TO-220AB. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 920pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.09 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRF530NPBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 70W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 35 ns. Switch-on time ton [nsec.]: 9.2 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 22:25