N-channel transistor IRF520NPBF, TO-220AB, 100V, 0.20 Ohms, 100V

N-channel transistor IRF520NPBF, TO-220AB, 100V, 0.20 Ohms, 100V

Quantity
Unit price
1-49
2.24$
50+
1.40$
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Quantity in stock: 633

N-channel transistor IRF520NPBF, TO-220AB, 100V, 0.20 Ohms, 100V. Housing: TO-220AB. Drain-source voltage (Vds): 100V. Housing (JEDEC standard): -. On-resistance Rds On: 0.20 Ohms. Drain-source voltage Uds [V]: 100V. Channel type: N. Ciss Gate Capacitance [pF]: 330pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 9.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 5.7A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRF520NPBF. Max drain current: 9.7A. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 48W. Number of terminals: 3. Power: 48W. RoHS: yes. Switch-off delay tf[nsec.]: 32 ns. Switch-on time ton [nsec.]: 4.5 ns. Type of transistor: MOSFET power transistor. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 23:16

Technical documentation (PDF)
IRF520NPBF
22 parameters
Housing
TO-220AB
Drain-source voltage (Vds)
100V
On-resistance Rds On
0.20 Ohms
Drain-source voltage Uds [V]
100V
Channel type
N
Ciss Gate Capacitance [pF]
330pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
9.7A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.2 Ohms @ 5.7A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRF520NPBF
Max drain current
9.7A
Max temperature
+175°C.
Maximum dissipation Ptot [W]
48W
Number of terminals
3
Power
48W
RoHS
yes
Switch-off delay tf[nsec.]
32 ns
Switch-on time ton [nsec.]
4.5 ns
Type of transistor
MOSFET power transistor
Original product from manufacturer
International Rectifier