N-channel transistor IRF520, TO-220, 6.5A, 9.2A, 250uA, 0.27 Ohms, TO-220, 100V. Housing: TO-220. ID (T=100°C): 6.5A. ID (T=25°C): 9.2A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 360pF. Channel type: N. Charge: 16.7nC. Conditioning: tubus. Cost): 150pF. Drain current: 9.7A. Drain-source protection: diode. Drain-source voltage: 100V. Function: Low Input Charge. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 3.1K/W. IDss (min): 25uA. Id(imp): 37A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 60W. Polarity: unipolar. Power: 48W. Quantity per case: 1. RoHS: yes. Td(off): 19 ns. Td(on): 8.8 ns. Technology: STripFET II POWER MOSFET. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 09:27