N-channel transistor IRF510, TO-220, 4A, 5.6A, 250uA, 0.54 Ohms, TO-220AB, 100V. Housing: TO-220. ID (T=100°C): 4A. ID (T=25°C): 5.6A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 180pF. Channel type: N. Charge: 8.3nC. Conditioning: tubus. Cost): 81pF. Drain current: 4A, 5.6A. Drain-source protection: diode. Drain-source voltage: 100V. Function: -. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 20A. On-state resistance: 0.54 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 43W. Polarity: unipolar. Power: 43W. Quantity per case: 1. RoHS: yes. Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27