N-channel transistor IRF3711ZS, 65A, 92A, 150uA, 0.0048 Ohm, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 20V

N-channel transistor IRF3711ZS, 65A, 92A, 150uA, 0.0048 Ohm, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 20V

Quantity
Unit price
1-4
2.65$
5-24
2.31$
25-49
2.13$
50+
1.92$
Quantity in stock: 2

N-channel transistor IRF3711ZS, 65A, 92A, 150uA, 0.0048 Ohm, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 20V. ID (T=100°C): 65A. ID (T=25°C): 92A. Idss (max): 150uA. On-resistance Rds On: 0.0048 Ohm. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 20V. Assembly/installation: surface-mounted component (SMD). C(in): 2150pF. Channel type: N. Cost): 680pF. Drain-source protection: zener diode. Function: High Frequency Synchronous Buck. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 380A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 79W. Quantity per case: 1. RoHS: yes. Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.45V. Vgs(th) min.: 1.55V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF3711ZS
30 parameters
ID (T=100°C)
65A
ID (T=25°C)
92A
Idss (max)
150uA
On-resistance Rds On
0.0048 Ohm
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
D2PAK ( TO-263 )
Voltage Vds(max)
20V
Assembly/installation
surface-mounted component (SMD)
C(in)
2150pF
Channel type
N
Cost)
680pF
Drain-source protection
zener diode
Function
High Frequency Synchronous Buck
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
380A
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
79W
Quantity per case
1
RoHS
yes
Td(off)
15 ns
Td(on)
12 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
16 ns
Type of transistor
MOSFET
Vgs(th) max.
2.45V
Vgs(th) min.
1.55V
Original product from manufacturer
International Rectifier