N-channel transistor IRF3711S, 69A, 110A, 100uA, 4.7M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 20V. ID (T=100°C): 69A. ID (T=25°C): 110A. Idss (max): 100uA. On-resistance Rds On: 4.7M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 20V. Assembly/installation: surface-mounted component (SMD). C(in): 2980pF. Channel type: N. Cost): 1770pF. Drain-source protection: zener diode. Function: High Frequency Isolated DC-DC. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id(imp): 440A. Number of terminals: 2. Pd (Power Dissipation, Max): 120W. Quantity per case: 1. RoHS: yes. Td(off): 17 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Temperature: +150°C. Trr Diode (Min.): 48 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27