N-channel transistor IRF3710S, 40A, 57A, 250uA, 0.025 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V

N-channel transistor IRF3710S, 40A, 57A, 250uA, 0.025 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V

Quantity
Unit price
1-4
3.11$
5-24
2.71$
25-49
2.39$
50-99
2.12$
100+
1.77$
Quantity in stock: 52

N-channel transistor IRF3710S, 40A, 57A, 250uA, 0.025 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=100°C): 40A. ID (T=25°C): 57A. Idss (max): 250uA. On-resistance Rds On: 0.025 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 3000pF. Channel type: N. Cost): 640pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 180A. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Td(off): 58 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF3710S
29 parameters
ID (T=100°C)
40A
ID (T=25°C)
57A
Idss (max)
250uA
On-resistance Rds On
0.025 Ohms
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
D2PAK ( TO-263 )
Voltage Vds(max)
100V
Assembly/installation
surface-mounted component (SMD)
C(in)
3000pF
Channel type
N
Cost)
640pF
Drain-source protection
zener diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
180A
Number of terminals
2
Pd (Power Dissipation, Max)
200W
Quantity per case
1
RoHS
yes
Td(off)
58 ns
Td(on)
14 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
210 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier