N-channel transistor IRF3415PBF, 150V, 0.042 Ohms
Quantity
Unit price
1-4
4.01$
5-9
2.90$
10-19
2.73$
20-49
2.63$
50+
2.52$
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| Quantity in stock: 10 |
N-channel transistor IRF3415PBF, 150V, 0.042 Ohms. Drain-source voltage (Vds): 150V. On-resistance Rds On: 0.042 Ohms. : 'enhanced'. Assembly/installation: THT. Channel type: N. Charge: 133.3nC. Drain current: 43A. Drain-source voltage: 150V. Gate-source voltage: ±20V. Max drain current: 43A. Packaging: tubus. Polarity: unipolar. Power: 200W. Technology: HEXFET®. Type of transistor: N-MOSFET. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 11/02/2025, 01:55
IRF3415PBF
16 parameters
Drain-source voltage (Vds)
150V
On-resistance Rds On
0.042 Ohms
'enhanced'
Assembly/installation
THT
Channel type
N
Charge
133.3nC
Drain current
43A
Drain-source voltage
150V
Gate-source voltage
±20V
Max drain current
43A
Packaging
tubus
Polarity
unipolar
Power
200W
Technology
HEXFET®
Type of transistor
N-MOSFET
Original product from manufacturer
Infineon Technologies