N-channel transistor IRF3415, 30A, 43A, 250uA, 0.0042 Ohms, TO-220, TO-220AB, 150V

N-channel transistor IRF3415, 30A, 43A, 250uA, 0.0042 Ohms, TO-220, TO-220AB, 150V

Quantity
Unit price
1-4
2.00$
5-24
1.78$
25-49
1.58$
50-99
1.41$
100+
1.20$
Quantity in stock: 50

N-channel transistor IRF3415, 30A, 43A, 250uA, 0.0042 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 30A. ID (T=25°C): 43A. Idss (max): 250uA. On-resistance Rds On: 0.0042 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. Assembly/installation: PCB through-hole mounting. C(in): 2400pF. Channel type: N. Cost): 640pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 150A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Td(off): 71 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF3415
30 parameters
ID (T=100°C)
30A
ID (T=25°C)
43A
Idss (max)
250uA
On-resistance Rds On
0.0042 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
150V
Assembly/installation
PCB through-hole mounting
C(in)
2400pF
Channel type
N
Cost)
640pF
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
150A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
200W
Quantity per case
1
RoHS
yes
Td(off)
71 ns
Td(on)
12 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
260 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier