N-channel transistor IRF3315, 19A, 27A, 250uA, 0.07 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 19A. ID (T=25°C): 27A. Idss (max): 250uA. On-resistance Rds On: 0.07 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Cost): 300pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 108A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 136W. Quantity per case: 1. RoHS: yes. Td(off): 49 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 174 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27