N-channel transistor IRF3205STRLPBF, D²-PAK, TO-263, 55V
Quantity
Unit price
1-24
1.96$
25+
1.40$
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N-channel transistor IRF3205STRLPBF, D²-PAK, TO-263, 55V. Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 55V. Ciss Gate Capacitance [pF]: 3247pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 98A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 59A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: F3205S. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 150W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 50 ns. Switch-on time ton [nsec.]: 14 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 20:19
IRF3205STRLPBF
17 parameters
Housing
D²-PAK
Housing (JEDEC standard)
TO-263
Drain-source voltage Uds [V]
55V
Ciss Gate Capacitance [pF]
3247pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
98A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.008 Ohms @ 59A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
F3205S
Max temperature
+175°C.
Maximum dissipation Ptot [W]
150W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
50 ns
Switch-on time ton [nsec.]
14 ns
Original product from manufacturer
International Rectifier