N-channel transistor IRF3205PBF, TO220AB, 55V, 55V. Housing: TO220AB. Vdss (Drain to Source Voltage): 55V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 55V. Assembly/installation: THT. Charge: 97.3nC. Ciss Gate Capacitance [pF]: 3247pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 98A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 59A. Drain current: 110A. Drain-source voltage: 55V. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: 4 v. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs max: -20V. Housing thermal resistance: 1K/W. Id @ Tc=25°C (Continuous Drain Current): 110A. Information: -. MSL: -. Manufacturer's marking: IRF3205PBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 150W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Polarity: unipolar. Power: 150W. RoHS: yes. Series: HEXFET. Switch-off delay tf[nsec.]: 50 ns. Switch-on time ton [nsec.]: 14 ns. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 17:57