N-channel transistor IRF3205, 80A, 110A, 250uA, 0.008 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 80A. ID (T=25°C): 110A. Idss (max): 250uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 3247pF. Channel type: N. Cost): 781pF. Drain-source protection: yes. Function: 'Advanced Process Technology'. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 390A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Td(off): 50 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27