N-channel transistor IRF2903ZS, 180A, 260A, 250uA, 0.019 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=100°C): 180A. ID (T=25°C): 260A. Idss (max): 250uA. On-resistance Rds On: 0.019 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 6320pF. Channel type: N. Cost): 1980pF. Drain-source protection: yes. Function: AUTOMOTIVE MOSFET. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id(imp): 1020A. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 290W. Quantity per case: 1. RoHS: yes. Td(off): 48 ns. Td(on): 24 ns. Technology: HEXFET Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/27/2025, 04:00