N-channel transistor IRF2805, 43A, 75A, 250uA, 3.9m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 43A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 3.9m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 5110pF. Channel type: N. Cost): 1190pF. Drain-source protection: zener diode. Function: Fast Switching, Automotive applications. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id(imp): 700A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 330W. Quantity per case: 1. RoHS: yes. Td(off): 68 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27