N-channel transistor IRF1405ZPBF, 110A, 150A, 250uA, 0.0037 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 110A. ID (T=25°C): 150A. Idss (max): 250uA. On-resistance Rds On: 0.0037 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 4780pF. Channel type: N. Cost): 770pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id(imp): 600A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 230W. Quantity per case: 1. RoHS: yes. Spec info: Rds-on 0.0037 Ohms max. Td(off): 48 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 09:27