N-channel transistor IRF1405, TO-220, 118A, 169A, 250uA, 0.0046 Ohms, TO-220AB, 55V

N-channel transistor IRF1405, TO-220, 118A, 169A, 250uA, 0.0046 Ohms, TO-220AB, 55V

Quantity
Unit price
1-4
2.56$
5-24
2.19$
25-49
1.94$
50-99
1.76$
100+
1.52$
+10 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 95

N-channel transistor IRF1405, TO-220, 118A, 169A, 250uA, 0.0046 Ohms, TO-220AB, 55V. Housing: TO-220. ID (T=100°C): 118A. ID (T=25°C): 169A. Idss (max): 250uA. On-resistance Rds On: 0.0046 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 5480pF. Channel type: N. Charge: 170nC. Conditioning: tubus. Cost): 1210pF. Drain current: 133A. Drain-source protection: yes. Drain-source voltage: 55V. Function: AUTOMOTIVE MOSFET. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 450mK/W. IDss (min): 20uA. Id(imp): 680A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 330W. Polarity: unipolar. Power: 200W. Quantity per case: 1. RoHS: yes. Spec info: Rds-on 0.0046 Ohms max. Td(off): 130 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 88 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF1405
39 parameters
Housing
TO-220
ID (T=100°C)
118A
ID (T=25°C)
169A
Idss (max)
250uA
On-resistance Rds On
0.0046 Ohms
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
55V
Assembly/installation
PCB through-hole mounting
C(in)
5480pF
Channel type
N
Charge
170nC
Conditioning
tubus
Cost)
1210pF
Drain current
133A
Drain-source protection
yes
Drain-source voltage
55V
Function
AUTOMOTIVE MOSFET
G-S Protection
no
Gate-source voltage
20V, ±20V
Gate/source voltage Vgs
20V
Housing thermal resistance
450mK/W
IDss (min)
20uA
Id(imp)
680A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
330W
Polarity
unipolar
Power
200W
Quantity per case
1
RoHS
yes
Spec info
Rds-on 0.0046 Ohms max
Td(off)
130 ns
Td(on)
13 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
88 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier