N-channel transistor IRF1404S, 130A, 190A, 250uA, 2.7M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V

N-channel transistor IRF1404S, 130A, 190A, 250uA, 2.7M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V

Quantity
Unit price
1-4
4.77$
5-9
4.22$
10-24
3.84$
25-49
3.62$
50+
3.22$
Quantity in stock: 15

N-channel transistor IRF1404S, 130A, 190A, 250uA, 2.7M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V. ID (T=100°C): 130A. ID (T=25°C): 190A. Idss (max): 250uA. On-resistance Rds On: 2.7M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 40V. Assembly/installation: surface-mounted component (SMD). C(in): 4340pF. Channel type: N. Cost): 1030pF. Drain-source protection: yes. Function: AUTOMOTIVE MOSFET. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id(imp): 750A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 220W. Quantity per case: 1. RoHS: yes. Td(off): 36ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:03

Technical documentation (PDF)
IRF1404S
30 parameters
ID (T=100°C)
130A
ID (T=25°C)
190A
Idss (max)
250uA
On-resistance Rds On
2.7M Ohms
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
D2PAK ( TO-263 )
Voltage Vds(max)
40V
Assembly/installation
surface-mounted component (SMD)
C(in)
4340pF
Channel type
N
Cost)
1030pF
Drain-source protection
yes
Function
AUTOMOTIVE MOSFET
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
20uA
Id(imp)
750A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
220W
Quantity per case
1
RoHS
yes
Td(off)
36ns
Td(on)
18 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
28 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier