N-channel transistor IRF1404, TO-220, 115A, 162A, 250uA, 3.5m Ohms, TO-220AB, 40V

N-channel transistor IRF1404, TO-220, 115A, 162A, 250uA, 3.5m Ohms, TO-220AB, 40V

Quantity
Unit price
1-4
2.33$
5-24
2.03$
25-49
1.83$
50-99
1.67$
100+
1.47$
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Quantity in stock: 105

N-channel transistor IRF1404, TO-220, 115A, 162A, 250uA, 3.5m Ohms, TO-220AB, 40V. Housing: TO-220. ID (T=100°C): 115A. ID (T=25°C): 162A. Idss (max): 250uA. On-resistance Rds On: 3.5m Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. Assembly/installation: PCB through-hole mounting. C(in): 7360pF. Channel type: N. Conditioning: tubus. Cost): 1680pF. Drain current: 202A. Drain-source protection: yes. Drain-source voltage: 40V. Function: AUTOMOTIVE MOSFET. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 750mK/W. IDss (min): 20uA. Id(imp): 650A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Polarity: unipolar. Power: 200W. Quantity per case: 1. RoHS: yes. Td(off): 72 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 71 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:03

Technical documentation (PDF)
IRF1404
37 parameters
Housing
TO-220
ID (T=100°C)
115A
ID (T=25°C)
162A
Idss (max)
250uA
On-resistance Rds On
3.5m Ohms
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
40V
Assembly/installation
PCB through-hole mounting
C(in)
7360pF
Channel type
N
Conditioning
tubus
Cost)
1680pF
Drain current
202A
Drain-source protection
yes
Drain-source voltage
40V
Function
AUTOMOTIVE MOSFET
G-S Protection
no
Gate-source voltage
20V, ±20V
Gate/source voltage Vgs
20V
Housing thermal resistance
750mK/W
IDss (min)
20uA
Id(imp)
650A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
200W
Polarity
unipolar
Power
200W
Quantity per case
1
RoHS
yes
Td(off)
72 ns
Td(on)
17 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
71 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier