N-channel transistor IRF1324, TO-220, 249A, 353A, 250uA, 1.2m Ohms, TO-220AB, 24V. Housing: TO-220. ID (T=100°C): 249A. ID (T=25°C): 353A. Idss (max): 250uA. On-resistance Rds On: 1.2m Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 24V. Assembly/installation: PCB through-hole mounting. C(in): 5790pF. Channel type: N. Charge: 160nC. Conditioning: tubus. Cost): 3440pF. Drain current: 353A. Drain-source protection: yes. Drain-source voltage: 24V. Function: High Efficiency Synchronous Rectification in SMPS, High Speed Power Sw.. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 500mK/W. IDss (min): 20uA. Id(imp): 1412A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 300W. Polarity: unipolar. Power: 300W. Quantity per case: 1. RoHS: yes. Td(off): 83 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 46 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 09:03