N-channel transistor IRF1310NSPBF, D²-PAK, TO-263, 100V. Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 1900pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 42A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: F1310NS. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 160W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 45 ns. Switch-on time ton [nsec.]: 11 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 21:47