N-channel transistor IRF1310NPBF, TO-220AB, 100V
Quantity
Unit price
1+
6.74$
| Quantity in stock: 114 |
N-channel transistor IRF1310NPBF, TO-220AB, 100V. Housing: TO-220AB. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 1900pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 41A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IRF1310NPBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 160W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 45 ns. Switch-on time ton [nsec.]: 11 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 21:47
IRF1310NPBF
16 parameters
Housing
TO-220AB
Drain-source voltage Uds [V]
100V
Ciss Gate Capacitance [pF]
1900pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
41A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.036 Ohms @ 22A
Gate breakdown voltage Ugs [V]
4 v
Manufacturer's marking
IRF1310NPBF
Max temperature
+175°C.
Maximum dissipation Ptot [W]
160W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
45 ns
Switch-on time ton [nsec.]
11 ns
Original product from manufacturer
International Rectifier