N-channel transistor IPN70R600P7SATMA1, 6m Ohms, PG-SOT223
Quantity
Unit price
1-9
1.74$
10-24
1.59$
25-49
1.50$
50-99
1.42$
100+
1.25$
| Quantity in stock: 21 |
N-channel transistor IPN70R600P7SATMA1, 6m Ohms, PG-SOT223. On-resistance Rds On: 6m Ohms. Housing (according to data sheet): PG-SOT223. Assembly/installation: surface-mounted component (SMD). Channel type: N. Conditioning: roll. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 6.9W. Quantity per case: 1. RoHS: yes. Type of transistor: MOSFET. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27
IPN70R600P7SATMA1
11 parameters
On-resistance Rds On
6m Ohms
Housing (according to data sheet)
PG-SOT223
Assembly/installation
surface-mounted component (SMD)
Channel type
N
Conditioning
roll
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
6.9W
Quantity per case
1
RoHS
yes
Type of transistor
MOSFET
Original product from manufacturer
Infineon Technologies