N-channel transistor IPD50N03S2L-06, 50A, 50A, 27uA, 7.6m Ohms, D-PAK ( TO-252 ), PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 27uA. On-resistance Rds On: 7.6m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 1900pF. Channel type: N. Cost): 760pF. Drain-source protection: yes. Function: Logic Level, Enhancement mode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.01uA. Id(imp): 200A. Marking on the case: PN03L06. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 136W. Quantity per case: 1. RoHS: yes. Td(off): 40 ns. Td(on): 10 ns. Technology: OptiMOS® Power-Transistor. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27