N-channel transistor IPD050N03L-GATMA1, 50A, 50A, 100uA, 0.0058 Ohms, D-PAK ( TO-252 ), 30 v

N-channel transistor IPD050N03L-GATMA1, 50A, 50A, 100uA, 0.0058 Ohms, D-PAK ( TO-252 ), 30 v

Quantity
Unit price
1-4
1.25$
5-24
1.07$
25-49
0.97$
50-99
0.89$
100+
0.78$
Quantity in stock: 5

N-channel transistor IPD050N03L-GATMA1, 50A, 50A, 100uA, 0.0058 Ohms, D-PAK ( TO-252 ), 30 v. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 100uA. On-resistance Rds On: 0.0058 Ohms. Housing: D-PAK ( TO-252 ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 2400pF. Channel type: N. Cost): 920pF. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.1uA. Id(imp): 350A. Marking on the case: 050N03L. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 68W. RoHS: yes. Td(off): 25 ns. Td(on): 6.7 ns. Vgs(th) max.: 2.2V. Vgs(th) min.: 1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27

Technical documentation (PDF)
IPD050N03L-GATMA1
24 parameters
ID (T=100°C)
50A
ID (T=25°C)
50A
Idss (max)
100uA
On-resistance Rds On
0.0058 Ohms
Housing
D-PAK ( TO-252 )
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
2400pF
Channel type
N
Cost)
920pF
Drain-source protection
yes
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
0.1uA
Id(imp)
350A
Marking on the case
050N03L
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
68W
RoHS
yes
Td(off)
25 ns
Td(on)
6.7 ns
Vgs(th) max.
2.2V
Vgs(th) min.
1V
Original product from manufacturer
Infineon Technologies