N-channel transistor IPD034N06N3GATMA1, 100A, 100A, 10uA, 2.8m Ohms, D-PAK ( TO-252 ), PG-TO252-3 ( DPAK ), 60V. ID (T=100°C): 100A. ID (T=25°C): 100A. Idss (max): 10uA. On-resistance Rds On: 2.8m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3 ( DPAK ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 8000pF. Channel type: N. Cost): 1700pF. Drain-source protection: yes. Function: High Frequency Switching, Optimized tecnology for DC/DC converters. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.01uA. Id(imp): 400A. Marking on the case: 034N06N. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 167W. Quantity per case: 1. RoHS: yes. Td(off): 63 ns. Td(on): 38 ns. Technology: OptiMOS(TM)3 Power-Transistor. Trr Diode (Min.): 48 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27