N-channel transistor IPB80N06S2-09, 80A, 80A, 100uA, 7.6m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 7.6m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 2360pF. Channel type: N. Cost): 610pF. Drain-source protection: yes. Function: Automotive AEC Q101 qualified. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.01uA. Id(imp): 320A. Marking on the case: 2N0609. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 190W. Quantity per case: 1. RoHS: yes. Spec info: Ultra Low On-Resistance. Td(off): 39 ns. Td(on): 14 ns. Technology: MOSFET transistor. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27