N-channel transistor IPB80N03S4L-02, 80A, 80A, 1uA, 2.4M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 1uA. On-resistance Rds On: 2.4M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 7500pF. Channel type: N. Cost): 1900pF. Drain-source protection: diode. Function: Automotive AEC Q101 qualified. G-S Protection: no. IDss (min): 0.01uA. Id(imp): 320A. Marking on the case: 4N03L02. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 136W. Quantity per case: 1. RoHS: yes. Spec info: Ultra Low On-Resistance. Td(off): 62 ns. Td(on): 14 ns. Technology: power MOSFET transistor. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Vgs(th) max.: 2.2V. Vgs(th) min.: 1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27