N-channel transistor IPB020N10N5LFATMA1, D²-PAK, 100V. Housing: D²-PAK. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 840pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 60.4k Ohms. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.002 Ohms @ 100A. Gate breakdown voltage Ugs [V]: 3.3V. Manufacturer's marking: -. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 313W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 128 ns. Switch-on time ton [nsec.]: 7 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 21:53