N-channel transistor IPB014N06NATMA1, 2.1M Ohms, D2PAK ( TO-263 ), TO263-7
Quantity
Unit price
1-9
4.82$
10-49
4.51$
50-99
4.25$
100-499
4.05$
500+
3.55$
| Quantity in stock: 44 |
N-channel transistor IPB014N06NATMA1, 2.1M Ohms, D2PAK ( TO-263 ), TO263-7. On-resistance Rds On: 2.1M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO263-7. Assembly/installation: surface-mounted component (SMD). Channel type: N. Conditioning: roll. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 214W. Quantity per case: 1. RoHS: yes. Technology: OptiMOS Power. Type of transistor: MOSFET. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27
IPB014N06NATMA1
13 parameters
On-resistance Rds On
2.1M Ohms
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
TO263-7
Assembly/installation
surface-mounted component (SMD)
Channel type
N
Conditioning
roll
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
214W
Quantity per case
1
RoHS
yes
Technology
OptiMOS Power
Type of transistor
MOSFET
Original product from manufacturer
Infineon Technologies