N-channel transistor IPA80R1K0CEXKSA2, 3.6A, 5.7A, 50uA, 0.83 Ohms, TO-220FP, TO-220FP-3, 800V. ID (T=100°C): 3.6A. ID (T=25°C): 5.7A. Idss (max): 50uA. On-resistance Rds On: 0.83 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 785pF. Channel type: N. Cost): 33pF. Drain-source protection: yes. Function: ID pulse 18A. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 10uA. Id(imp): 18A. Marking on the case: 8R1K0CE. Note: completely insulated housing (2500VAC/60s). Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 32W. Quantity per case: 1. RoHS: yes. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos E6 POWER trafnsistor. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.5V. Vgs(th) min.: -20V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27