N-channel transistor IKW50N60H3, 50A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 50A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 116pF. CE diode: yes. Channel type: N. Collector current: 100A. Conditioning unit: 30. Conditioning: plastic tube. Cost): 2960pF. Diode threshold voltage: 1.65V. Function: High Speed Switching, Very Low VCEsat. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 200A. Marking on the case: K50H603. Maximum saturation voltage VCE(sat): 2.3V. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 333W. RoHS: yes. Saturation voltage VCE(sat): 1.85V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Td(off): 235 ns. Td(on): 23 ns. Trr Diode (Min.): 130 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27