N-channel transistor IKW40N120H3, TO-247, 40A, TO-247N, 1200V. Housing: TO-247. Ic(T=100°C): 40A. Housing (according to data sheet): TO-247N. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. Built-in diode: yes. C(in): 2330pF. CE diode: yes. Channel type: N. Collector current: 80A. Collector-emitter voltage: 1200V. Cost): 185pF. Function: 'Trench and Fieldstop' technology IGBT transistor. Gate/emitter voltage VGE(th) min.: 5.8V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 180A. Marking on the case: K40H1203. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 483W. Power: 483W. RoHS: yes. Saturation voltage VCE(sat): 2.05V. Td(off): 290 ns. Td(on): 30 ns. Trr Diode (Min.): 200 ns. Type of transistor: IGBT transistor. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27