N-channel transistor IKW30N60H3, 30A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 1630pF. CE diode: yes. Channel type: N. Collector current: 60A. Conditioning unit: 30. Conditioning: plastic tube. Cost): 107pF. Function: High Speed Switching, Very Low VCEsat. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 60.4k Ohms. Marking on the case: K30H603. Maximum saturation voltage VCE(sat): 2.5V. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 187W. RoHS: yes. Saturation voltage VCE(sat): 1.95V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Td(off): 207 ns. Td(on): 21 ns. Trr Diode (Min.): 117 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27