N-channel transistor IKW25T120, 25A, TO-247, TO-247 ( AC ), 1200V. Ic(T=100°C): 25A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 1860pF. CE diode: yes. Channel type: N. Collector current: 50A. Cost): 96pF. Function: 'Trench and Fieldstop' technology IGBT transistor. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 75A. Marking on the case: K25T120. Maximum saturation voltage VCE(sat): 2.2V. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 190W. RoHS: yes. Saturation voltage VCE(sat): 1.7V. Td(off): 560 ns. Td(on): 50 ns. Trr Diode (Min.): 200 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27