N-channel transistor IKP15N60T, 15A, TO-220, TO-220-3-1, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 860pF. CE diode: yes. Channel type: N. Collector current: 15A. Cost): 55pF. Function: High Speed ​​IGBT in NPT technology. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 45A. Marking on the case: K15T60. Maximum saturation voltage VCE(sat): 2.05V. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 130W. RoHS: yes. Saturation voltage VCE(sat): 1.5V. Td(off): 188 ns. Td(on): 17 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:27